Breakthrough progress in the localization of SiC single crystal laser stripping equipment!
Currently, the research team of the Second Research Institute of China Electronics Technology Group has mastered the principles and basic processes of laser peeling technology. By utilizing a self-built experimental testing platform, combined with special optical design, beam shaping, and multi-factor coupled peeling core technologies, they have achieved laser peeling of small-sized SiC (silicon carbide) single crystals. Recently, good news has come from the Second Research Institute of China Electronics Technology Group (hereinafter referred to as "CETC II") regarding breakthrough progress in the development of SiC laser peeling equipment.

As a key project for the innovation of third-generation semiconductor technology, the official launch of this project reflects the research strength of CETC II in areas such as SiC semiconductor materials, laser precision processing, optical system design and construction, and semiconductor manufacturing equipment development. It is reported that SiC semiconductor materials have advantages such as high thermal conductivity, high breakdown field strength, high saturation electron drift rate, and stable chemical properties, which are of great significance for the development of electric vehicles, high-voltage transmission and transformation, rail transit, communication base stations, satellite communications, and national defense military industry. However, due to the hardness of SiC materials being similar to that of diamond, the existing processing technology has slow cutting speeds, significant losses at the crystal and cutting line, and high costs, resulting in high material prices and limiting the widespread application of SiC semiconductor devices.
Laser vertical modification peeling equipment is known as the "lithography machine in third-generation semiconductors." It innovatively utilizes optical nonlinear effects to allow lasers to penetrate crystals, causing a series of physicochemical reactions within the crystal, ultimately achieving wafer peeling. This laser peeling can almost avoid the material loss caused by conventional multi-wire cutting technology, thereby increasing the yield of SiC substrates under the same amount of raw materials. In addition, laser peeling technology can also be applied to the thinning process of device wafers, achieving secondary utilization of the peeled wafers.

Focusing on the key core technologies and major application directions of third-generation semiconductors, CETC II aims to solve the prominent industry challenge of SiC substrate processing efficiency by prioritizing the development of SiC laser peeling equipment. This aims to achieve the localization of laser peeling equipment and strive to enable the development, industrialization, and complete line equipment solutions for core equipment of third-generation semiconductors. Currently, this research and development project has passed expert verification and has officially been launched. The next step will rely on the National Third-Generation Semiconductor Technology Innovation Center to gather research advantages, focus on the practical and engineering application of laser peeling technology, actively promote the collaborative innovation of processes and equipment, and develop fast production, fully automated, and low-energy laser peeling equipment.
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Shenzhen SHINHOP Laser Equipment Co., Ltd. It is a scientific and technological enterprise specializing in the research and development, production and sales of industrial laser processing equipment. It has been deeply engaged in the new energy industry for 20 years, focusing on the non-standard customization of automatic lithium battery cell assembly line and module PACK production line. It has successively obtained the national high-tech and specialized new enterprise certification.
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2026-06-11